112-GHz, 157-GHz, and 180-GHz InP HEMT Traveling-Wave Amplifiers - Microwave Theory and Techniques, IEEE Transactions on
نویسندگان
چکیده
We report traveling-wave amplifiers having 1–112 GHz bandwidth with 7 dB gain, and 1–157 GHz bandwidth with 5 dB gain. A third amplifier exhibited 5 dB gain and a 180GHz high-frequency cutoff. The amplifiers were fabricated in a 0.1m gate length InGaAs/InAlAs HEMT MIMIC technology. The use of gate-line capacitive-division, cascode gain cells and low-loss elevated coplanar waveguide lines have yielded record bandwidth broad-band amplifiers.
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